| PART |
Description |
Maker |
| CM100DU-34KA09 |
IGBT MODULES HIGH POWER SWITCHING USE
100 A, 1700 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| SKIM220GD176D |
IGBT Modules 220 A, 1700 V, N-CHANNEL IGBT
|
Semikron International
|
| ADL5367 ADL5367-EVALZ ADL5367ACPZ-R7 |
500 MHz to 1700 MHz Balanced Mixer, LO Buffer and RF Balun; Package: LFCSP: Leadform Chip Scale; No of Pins: 20; Temperature Range: Ind 500 MHz - 1700 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 8.5 dB CONVERSION LOSS-MAX
|
Analog Devices, Inc.
http://
|
| OM6509SAT |
10 A, 500 V, N-CHANNEL IGBT, TO-254AA
|
|
| IXGH22N50BS IXGH22N50B |
HiPerFAST IGBT
HiPerFAST IGBT 44 A, 500 V, N-CHANNEL IGBT, TO-247AD
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| ADL5357 |
500 MHz TO 1700 MHz Balanced Mixer with LO Buffer, IF Amp, and RF Balun
|
Analog Devices
|
| MID145-12A3 MII145-12A3 |
1200V IGBT module
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT
300 A, 1200 V, N-CHANNEL IGBT
100 A, 1000 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
75 A, 1000 V, N-CHANNEL IGBT
200 A, 1000 V, N-CHANNEL IGBT
50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| PPF450M |
N Channel MOSFET; Package: TO-254; ID (A): 8; RDS(on) (Ohms): 0.42; PD (W): 150; BVDSS (V): 500; Rq: 0.83; 12 A, 500 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| PPF430E |
N Channel MOSFET; Package: SMD-.5; ID (A): 2.6; RDS(on) (Ohms): 1.5; PD (W): 125; BVDSS (V): 500; Rq: 1; 4.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| FGAF40N60UFTU FGAF40N60UFTUNL |
Ultrafast IGBT; Package: TO-3PF; No of Pins: 3; Container: Rail 40 A, 600 V, N-CHANNEL IGBT
Ultrafast IGBT 40 A, 600 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
|
